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NCE2302B Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE2302B Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE2302B Pb Free Product http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 3.3A RDS(ON) < 60mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management Schematic diagram Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2302B NCE2302B SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 3.3 A Drain Current-Pulsed (Note 1) IDM 16 A Maximum Power Dissipation PD 0.9 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 139 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 22 - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA |
Similar Part No. - NCE2302B |
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