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TPS2836DRG4 Datasheet(PDF) 4 Page - Texas Instruments |
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TPS2836DRG4 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 17 page TPS2836, TPS2837 SYNCHRONOUSBUCK MOSFET DRIVER WITH DEADTIME CONTROL SLVS224B − NOVEMBER 1999 − REVISED AUGUST 2002 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating virtual junction temperature range, VCC = 6.5 V, CL = 3.3 nF (unless otherwise noted) supply current PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Supply voltage range 4.5 15 V Quiescent current VCC =15 V, V(ENABLE) = LOW 100 A VCC Quiescent current VCC =15 V, V(ENABLE) = HIGH 300 400 µA VCC Quiescent current VCC =12 V, fSWX = 200 kHz, CHIGHDR = 50 pF, BOOTLO grounded, CLOWDR = 50 pF, See Note 2 3 mA NOTE 2: Ensured by design, not production tested. output drivers PARAMETER TEST CONDITIONS MIN TYP MAX UNIT High-side sink Duty cycle < 2%, VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V 0.7 1.1 High-side sink (see Note 4) Duty cycle < 2%, tpw < 100 µs (see Note 3) VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 5 V 1.1 1.5 A (see Note 4) tpw < 100 µs (see Note 3) VBOOT – VBOOTLO = 12 V, VHIGHDR = 10.5 V 2 2.4 A High-side Duty cycle < 2%, VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5V 1.2 1.4 High-side source (see Note 4) Duty cycle < 2%, tpw < 100 µs (see Note 3) VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 1.5 V 1.3 1.6 A Peak output- source (see Note 4) tpw < 100 µs (see Note 3) VBOOT – VBOOTLO = 12 V, VHIGHDR = 1.5 V 2.3 2.7 A Peak output- current Low-side sink Duty cycle < 2%, VCC = 4.5 V, VLOWDR = 4 V 1.3 1.8 current Low-side sink (see Note 4) Duty cycle < 2%, tpw < 100 µs (see Note 3) VCC = 6.5 V, VLOWDR = 5 V 2 2.5 A (see Note 4) tpw < 100 µs (see Note 3) VCC = 12 V, VLOWDR = 10.5 V 3 3.5 A Low-side Duty cycle < 2%, VCC = 4.5 V, VLOWDR = 0.5V 1.4 1.7 Low-side source (see Note 4) Duty cycle < 2%, tpw < 100 µs (see Note 3) VCC = 6.5 V, VLOWDR = 1.5 V 2 2.4 A source (see Note 4) tpw < 100 µs (see Note 3) VCC = 12 V, VLOWDR = 1.5 V 2.5 3 A VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5 V 5 High-side sink (see Note 4) VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 0.5 V 5 Ω High-side sink (see Note 4) VBOOT – VBOOTLO = 12 V, VHIGHDR = 0.5 V 5 Ω VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V 75 High-side source (see Note 4) VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 6 V 75 Ω Output High-side source (see Note 4) VBOOT – VBOOTLO = 12 V, VHIGHDR =11.5 V 75 Ω Output resistance VDRV = 4.5 V, VLOWDR = 0.5 V 9 resistance Low-side sink (see Note 4) VDRV = 6.5 V VLOWDR = 0.5 V 7.5 Ω Low-side sink (see Note 4) VDRV = 12 V, VLOWDR = 0.5 V 6 Ω VDRV = 4.5 V, VLOWDR = 4 V 75 Low-side source (see Note 4) VDRV = 6.5 V, VLOWDR = 6 V 75 Ω Low-side source (see Note 4) VDRV = 12 V, VLOWDR = 11.5 V 75 NOTES: 3. Ensured by design, not production tested. 4. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance is the rDS(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. |
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