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TPS28226 Datasheet(PDF) 5 Page - Texas Instruments |
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TPS28226 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 39 page  TPS28226 www.ti.com SLUS791A – JULY 2007 – REVISED SEPTEMBER 2015 6.4 Thermal Information TPS28226 THERMAL METRIC VSON (DRB) SOIC (D) UNIT 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 50.2 123.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 57.5 77.0 °C/W RθJB Junction-to-board thermal resistance 25.9 63.5 °C/W ψJT Junction-to-top characterization parameter 1.5 27.7 °C/W ψJB Junction-to-board characterization parameter 26.0 63.0 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 9.5 N/A °C/W 6.5 Electrical Characteristics (1) VDD = 7.2 V, EN/PG pulled up to VDD by 100-kΩ resistor, TA = TJ = –40°C to 125°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT UNDER VOLTAGE LOCKOUT Rising threshold VPWM = 0 V 6.35 6.70 V Falling threshold VPWM = 0 V 4.7 5.0 V Hysteresis 1.00 1.35 V BIAS CURRENTS IDD(off) Bias supply current VEN/PG = low, PWM pin floating 350 μA IDD Bias supply current VEN/PG = high, PWM pin floating 500 μA INPUT (PWM) VPWM = 5 V 185 μA IPWM Input current VPWM = 0 V –200 μA PWM 3-state rising threshold(2) 1.0 V PWM 3-state falling threshold VPWM PEAK = 5 V 3.4 3.8 4.0 V tHLD_R 3-state shutdown Hold-off time 250 ns PWM minimum pulse to force UGATE TMIN CL = 3 nF at UGATE , VPWM = 5 V 30 ns pulse ENABLE/POWER GOOD (EN/PG) Enable high rising threshold PG FET OFF 1.7 2.1 V Enable low falling threshold PG FET OFF 0.8 1.0 V Hysteresis 0.35 0.70 V Power good output VDD = 2.5 V 0.2 V UPPER GATE DRIVER OUTPUT (UGATE) Source resistance 500 mA source current 1.0 2.0 Ω Source current (2) VUGATE-PHASE = 2.5 V 2.0 A tRU Rise time CL = 3 nF 10 ns Sink resistance 500 mA sink current 1.0 2.0 Ω Sink current (2) VUGATE-PHASE = 2.5 V 2.0 A tFU Fall time CL = 3 nF 10 ns (1) Typical values for TA = 25°C (2) Not production tested. Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPS28226 |
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