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NCE01H13D Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

Part # NCE01H13D
Description  NCE N-Channel Enhancement Mode Power MOSFET
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Manufacturer  NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]
Direct Link  http://www.ncepower.com
Logo NCEPOWER - Wuxi NCE Power Semiconductor Co., Ltd

NCE01H13D Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

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Wuxi NCE Power Semiconductor Co., Ltd
Page
v1.0
2
NCE01H13D
Pb Free Product
http://www.ncepower.com
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
RθJC
0.53
/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
100
110
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=100V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
3.0
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
-
5.3
6.8
mΩ
Forward Transconductance
gFS
VDS=5V,ID=20A
40
-
-
S
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
-
7180
-
PF
Output Capacitance
Coss
-
2800
-
PF
Reverse Transfer Capacitance
Crss
VDS=25V,VGS=0V,
F=1.0MHz
-
695
-
PF
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
-
31
-
nS
Turn-on Rise Time
tr
-
24
-
nS
Turn-Off Delay Time
td(off)
-
45
-
nS
Turn-Off Fall Time
tf
VDD=50V, RL=2.5Ω
VGS=10V,RGEN=3Ω
-
27
-
nS
Total Gate Charge
Qg
-
105
-
nC
Gate-Source Charge
Qgs
-
35
-
nC
Gate-Drain Charge
Qgd
VDS=50V,ID=20A,
VGS=10V
-
23
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=40A
-
0.85
1.2
V
Diode Forward Current
(Note 2)
IS
-
-
130
A
Reverse Recovery Time
trr
-
65
-
nS
Reverse Recovery Charge
Qrr
TJ = 25°C, IF =20A
di/dt = 100A/μs
(Note3)
-
110
-
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25 ,V
DD=50V,VG=10V,L=1mH,Rg=25Ω


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