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NCE01H13D Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE01H13D Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
2 / 7 page Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 2 NCE01H13D Pb Free Product http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 0.53 /W ℃ Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 110 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3.0 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 5.3 6.8 mΩ Forward Transconductance gFS VDS=5V,ID=20A 40 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 7180 - PF Output Capacitance Coss - 2800 - PF Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz - 695 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 31 - nS Turn-on Rise Time tr - 24 - nS Turn-Off Delay Time td(off) - 45 - nS Turn-Off Fall Time tf VDD=50V, RL=2.5Ω VGS=10V,RGEN=3Ω - 27 - nS Total Gate Charge Qg - 105 - nC Gate-Source Charge Qgs - 35 - nC Gate-Drain Charge Qgd VDS=50V,ID=20A, VGS=10V - 23 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=40A - 0.85 1.2 V Diode Forward Current (Note 2) IS - - 130 A Reverse Recovery Time trr - 65 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =20A di/dt = 100A/μs (Note3) - 110 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25 ,V ℃ DD=50V,VG=10V,L=1mH,Rg=25Ω |
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