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K6X1008C2D-GB55 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6X1008C2D-GB55 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 10 page CMOS SRAM K6X1008C2D Family Revision 1.0 September 2003 1 Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 0.1 0.2 0.3 1.0 Remark Preliminary Preliminary Preliminary Preliminary Final History Initial draft Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product. Revised - Added Lead Free 32-SOP-525 Product Revised - Added Lead Free 32-TSOP1-0820F Product Finalized - Changed ICC from 10mA to 5mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR(industrial) from 15 µA to 10µA - Changed IDR(Automotive) from 25 µA to 20µA Draft Data July 15, 2002 December 4, 2002 May 13, 2003 June 21, 2003 September 16, 2003 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. |
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