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CEP14N5 Datasheet(PDF) 2 Page - Chino-Excel Technology |
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CEP14N5 Datasheet(HTML) 2 Page - Chino-Excel Technology |
2 / 4 page Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.38 0.32 2 4 -100 100 1 Ω V nA nA µ A V 2 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ISf VSDg Typ Max 500 VDS =500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 7A VDD = 250V, ID =14A, VGS = 10V, RGEN = 25Ω VDS = 400V,ID = 14A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 14A 2100 220 7 42 62 130 25 84 124 260 50 50 11 19 66 14 1.4 pF pF pF ns ns ns ns nC nC nC A V CEP14N5/CEB14N5 CEF14N5 e.L = 7mH, IAS =12A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) =8A . g.Full package VSD test condition IS =8A . |
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