91813 TKIM TC-00002976 No. A2212-1/5

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

September, 2013

WPB4001

N-Channel Power MOSFET

500V, 26A, 0.26

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Features

•

ON-resistance RDS(on)=0.2

Ω (typ.)

•

Input capacitance Ciss=2250pF (typ.)

•

10V Drive

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain to Source Voltage

VDSS

500

V

Gate to Source Voltage

VGSS

±30

V

Drain Current (DC)

ID

26

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

90

A

Source to Drain Diode Forward Current (DC)

ISD

26

A

Source to Drain Diode Forward Current (Pulse)

ISDP

PW≤10μs, duty cycle≤1%

90

A

Allowable Power Dissipation

PD

2.5

W

Tc=25°C

220

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

EAS

543

mJ

IAV

14

A

Note :

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain to Source Breakdown Voltage

V(BR)DSS

ID=10mA, VGS=0V

500

V

Zero-Gate Voltage Drain Current

IDSS

VDS=400V, VGS=0V

100

μA

Gate to Source Leakage Current

IGSS

VGS=±30V, VDS=0V

±100

nA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

35

V

Forward Transfer Admittance

| yfs |

VDS=10V, ID=13A

7.5

15.5

S

Static Drain to Source On-State Resistance

RDS(on)

ID=13A, VGS=10V

0.20

0.26

Ω

Input Capacitance

Ciss

VDS=30V, f=1MHz

2250

pF

Output Capacitance

Coss

450

pF

Reverse Transfer Capacitance

Crss

90

pF

Turn-ON Delay Time

td(on)

See Fig.2

44

ns

Rise Time

tr

156

ns

Turn-OFF Delay Time

td(off)

224

ns

Fall Time

tf

94

ns

Total Gate Charge

Qg

VDS=200V, VGS=10V, ID=26A

87

nC

Gate to Source Charge

Qgs

15.2

nC

Gate to Drain “Miller” Charge

Qgd

50

nC

Diode Forward Voltage

VSD

IS=26A, VGS=0V

1.1

1.5

V

Reverse Recovery Time

trr

See Fig.3

ISD=26A, VGS=0V, di/dt=100A/μs

115

ns

Reverse Recovery Charge

Qrr

340

nC

Ordering number : ENA2212

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of this data sheet.

TO-3P-3L