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NCE3404Y Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE3404Y Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE3404Y Pb Free Product http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3404Y uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features ● VDS = 30V,ID = 5.8A RDS(ON) < 28mΩ @ VGS=10V RDS(ON) < 40mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Load switch ● PWM application D G S Schematic diagram Markin nment g and pin assig SOT-23-3L top view P ing a derin ackage Mark nd Or g Information Devi ing De e Ta h ce Mark Device vice Packag Reel Size pe widt Quantity 3404Y NCE3404Y SOT-23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Sy b l m o Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5.8 A Drain Current-Pulsed (Note 1) IDM 20 A Maximum Power Dissipation PD 1.4 W Operating Junction and Storage Temperature Range J STG -55 To 150 ℃ T ,T Thermal Characteristic (Note ) Thermal Resistance,Junction-to-Ambient 2 RθJA 89 /W ℃ Electrical Characteristics (T =25℃unless otherwis A e noted) Condition Parameter Symbol Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDS V 250 33 S GS=0V ID= μA 30 - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA |
Similar Part No. - NCE3404Y |
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Similar Description - NCE3404Y |
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