CEP840A/CEB840A

CEF840A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

High power and current handing capability.

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

- Derate above 25 C

500

1

150

34

6

V

W

A

A

V

W/ C

1

S

G

D

G

S

D

CEB SERIES

TO-263(DD-PAK)

S

D

G

CEP SERIES

TO-220

CEF SERIES

TO-220F

S

D

G

Type

CEP840A

CEF840A

500V

500V

0.85Ω

0.85Ω

8.5A

10V

10V

0.3

48

CEB840A

500V

8.5A

10V

TO-220/263

TO-220F

PRELIMINARY

http://www.cetsemi.com

This is preliminary information on a new product in development now .

Details are subject to change without notice .

Rev 1. 2011.Nov

0.85Ω

Drain Current-Continuous

A

8.5

Lead-free plating ; RoHS compliant.

mJ

A

196

7.5

Operating and Store Temperature Range

-55 to 175

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

C/W

62.5

1

3.1

65