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NCE01P18L Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE01P18L Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
2 / 7 page Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 2 NCE01P18L Pb Free Product http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJc 1.79 /W ℃ Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -100 - - V Zero Gate Voltage Drain Current IDSS VDS=-100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±20 μA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.9 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-16A - 85 100 mΩ Forward Transconductance gFS VDS=-50V,ID=-10A 5 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 1300 - PF Output Capacitance Coss - 400 - PF Reverse Transfer Capacitance Crss VDS=-25V,VGS=0V, F=1.0MHz - 240 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 16 - nS Turn-on Rise Time tr - 73 - nS Turn-Off Delay Time td(off) - 34 - nS Turn-Off Fall Time tf VDD=-50V,ID=-16A VGS=-10V,RGEN=9.1Ω - 57 - nS Total Gate Charge Qg - 61 - nC Gate-Source Charge Qgs - 14 - nC Gate-Drain Charge Qgd VDS=-80V,ID=-16A, VGS=-10V - 29 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-18A - - -1.2 V Diode Forward Current (Note 2) IS - - - -18 A Reverse Recovery Time trr - 88.3 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =-18A di/dt = 100A/μs (Note3) - 65.9 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃,VDD=-50V,VG=-10V,L=0.5mH,Rg=25Ω |
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