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NCE15GD120T Datasheet(PDF) 3 Page - Wuxi NCE Power Semiconductor Co., Ltd

Part # NCE15GD120T
Description  1200V, 15A, Trench NPT IGBT
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Manufacturer  NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]
Direct Link  http://www.ncepower.com
Logo NCEPOWER - Wuxi NCE Power Semiconductor Co., Ltd

NCE15GD120T Datasheet(HTML) 3 Page - Wuxi NCE Power Semiconductor Co., Ltd

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Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
NCE15GD120T
Pb Free Product
Electrical Characteristics of Diode T
C=25°C
Symbol Parameter
Test Conditions
Min.
Typ. Max.
Units
25°C
1.4
1.8
V
VFM
Diode Forward Voltage
IF=15A
125°C
1.42
V
25°C
575
ns
trr
Diode Reverse Recovery
Time
125°C
577
ns
25°C
30
A
Irr
Diode Peak Reverse
Recovery Current
125°C
37
A
25°C
8.7
uC
Qrr
Diode Reverse Recovery
Charge
IF=15A,
dI/dt=200A/us
125°C
10.7
uC


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