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NCE60P25K Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE60P25K Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
2 / 7 page Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 2 NCE60P25K Pb Free Product http://www.ncepower.com Thermal Characteristic Thermal Resistance, Junction-to-Case (Note 2) RθJC 1.4 /W ℃ Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -60 - - V Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -2 -2.6 -3.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-20A - 37 45 mΩ Forward Transconductance gFS VDS=-10V,ID=-10A - 25 - S Dynamic Characteristics (Note4) Input Capacitance Clss - 3430 - PF Output Capacitance Coss - 391 - PF Reverse Transfer Capacitance Crss VDS=-30V,VGS=0V, F=1.0MHz - 272 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 12 - nS Turn-on Rise Time tr - 15 - nS Turn-Off Delay Time td(off) - 38 - nS Turn-Off Fall Time tf VDD=-30V, RL=1.5Ω, VGS=-10V,RG=3Ω - 15 - nS Total Gate Charge Qg - 46 nC Gate-Source Charge Qgs - 9.5 nC Gate-Drain Charge Qgd VDS=-30,ID=-20A, VGS=-10V - 10.5 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-10A - -1.2 V Diode Forward Current (Note 2) IS - - -25 A Reverse Recovery Time trr - 47 nS Reverse Recovery Charge Qrr TJ = 25°C, IF =- 10A di/dt = -100A/μs (Note3) - 53 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition: Tj=25℃,VDD=-20V,VG=-10V,L=1mH,Rg=25Ω,IAS=33A |
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