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NCE65R2K4I Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE65R2K4I Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 8 page  Wuxi NCE Power Semiconductor Co., Ltd Page http://www.ncepower.com v1.0 1 NCE65R2K4I，NCE65R2K4K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） VDS@Tjmax 710 V RDS(ON) TYP 2.2 Ω ID 1.8 A Package Marking And Ordering Information Device Device Package Marking NCE65R2K4I TO-251 NCE65R2K4I NCE65R2K4K TO-252 NCE65R2K4K Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Value Unit Drain-Source Voltage ( VGS=0V） VDS 650 V Gate-Source Voltage ( VDS=0V) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 1.8 A Continuous Drain Current at Tc=100°C ID (DC) 1.2 A Pulsed drain current (Note 1) IDM (pluse) 5.4 A Maximum Power Dissipation(Tc=25℃) Derate above 25 °C PD 22 0.176 W W/ °C Single pulse avalanche energy (Note2) EAS 40 mJ Avalanche current (Note 1) IAR 0.9 A Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR 0.06 mJ Schematic diagram TO-251 TO-252 |
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