Wuxi NCE Power Semiconductor Co., Ltd

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NCE70R540D,NCE70R540,NCE70R540F

Parameter

Symbol

NCE70R540D

NCE70R540

NCE70R540F

Unit

dv/dt

50

V/ns

dv/dt

15

V/ns

Operating Junction and Storage Temperature Range

-55...+150

°C

* limited by maximum junction temperature

Table 2.

Thermal Characteristic

Parameter

Symbol

NCE70R540D

NCE70R540

NCE70R540F

Unit

Thermal Resistance，Junction-to-Case（Maximum）

1.56

3.94

°C /W

Thermal Resistance，Junction-to-Ambient （Maximum）

62

80

°C /W

Table 3.

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

On/off states

Drain-Source Breakdown Voltage

700

V

Zero Gate Voltage Drain Current(Tc=25℃)

1

μA

Zero Gate Voltage Drain Current(Tc=125℃)

100

μA

Gate-Body Leakage Current

±100

nA

Gate Threshold Voltage

2.5

3

3.5

V

Drain-Source On-State Resistance

540

600

mΩ

Dynamic Characteristics

Forward Transconductance

5.5

S

Input Capacitance

680

pF

Output Capacitance

58

pF

Reverse Transfer Capacitance

F=1.0MHz

4

pF

Total Gate Charge

14.5

22

nC

Gate-Source Charge

2.8

nC

Gate-Drain Charge

5.5

nC

Intrinsic gate resistance

f = 1 MHz open drain

2

Ω

Switching times

Turn-on Delay Time

5.5

nS

Turn-on Rise Time

3.5

nS

Turn-Off Delay Time

55

75

nS

Turn-Off Fall Time

6.5

10

nS

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

8

A

Pulsed Source-drain current(Body Diode)

23.4

A

Forward On Voltage

0.9

1.2

V

Reverse Recovery Time

220

nS

Reverse Recovery Charge

2.2

uC

Peak Reverse Recovery Current

20

A

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature