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NCE70R540D Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE70R540D Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
2 / 10 page Wuxi NCE Power Semiconductor Co., Ltd Page http://www.ncepower.com v1.0 2 NCE70R540D,NCE70R540,NCE70R540F Parameter Symbol NCE70R540D NCE70R540 NCE70R540F Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt,VDS ≤480 V,ISD<ID dv/dt 15 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55...+150 °C * limited by maximum junction temperature Table 2. Thermal Characteristic Parameter Symbol NCE70R540D NCE70R540 NCE70R540F Unit Thermal Resistance,Junction-to-Case(Maximum) RthJC 1.56 3.94 °C /W Thermal Resistance,Junction-to-Ambient (Maximum) RthJA 62 80 °C /W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 700 V Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=700V,VGS=0V 1 μA Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=700V,VGS=0V 100 μA Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2.5 3 3.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A 540 600 mΩ Dynamic Characteristics Forward Transconductance gFS VDS = 20V, ID = 4A 5.5 S Input Capacitance Clss 680 pF Output Capacitance Coss 58 pF Reverse Transfer Capacitance Crss VDS=50V,VGS=0V, F=1.0MHz 4 pF Total Gate Charge Qg 14.5 22 nC Gate-Source Charge Qgs 2.8 nC Gate-Drain Charge Qgd VDS=480V,ID=8A, VGS=10V 5.5 nC Intrinsic gate resistance RG f = 1 MHz open drain 2 Ω Switching times Turn-on Delay Time td(on) 5.5 nS Turn-on Rise Time tr 3.5 nS Turn-Off Delay Time td(off) 55 75 nS Turn-Off Fall Time tf VDD=380V,ID=4A, RG=12Ω,VGS=10V 6.5 10 nS Source- Drain Diode Characteristics Source-drain current(Body Diode) ISD 8 A Pulsed Source-drain current(Body Diode) ISDM TC=25°C 23.4 A Forward On Voltage VSD Tj=25°C,ISD=8A,VGS=0V 0.9 1.2 V Reverse Recovery Time trr 220 nS Reverse Recovery Charge Qrr 2.2 uC Peak Reverse Recovery Current Irrm Tj=25°C,IF=8A,di/dt=100A/μs 20 A Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω |
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