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NCE603S Datasheet(PDF) 6 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE603S Datasheet(HTML) 6 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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6 / 10 page  Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 6 NCE603S Pb Free Product http://www.ncepower.com P-Channel Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -60 - - V Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.5 -2.6 -3.0 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-6A - 64 80 mΩ Forward Transconductance gFS VDS=-5V,ID=-6A 11 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 960 - PF Output Capacitance Coss - 86 - PF Reverse Transfer Capacitance Crss VDS=-30V,VGS=0V, F=1.0MHz - 38 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 9 - nS Turn-on Rise Time tr - 10 - nS Turn-Off Delay Time td(off) - 25 - nS Turn-Off Fall Time tf VDD=-30V ,RL=2.5Ω VGS=-10V,RG=3Ω - 11 - nS Total Gate Charge Qg - 15.8 nC Gate-Source Charge Qgs - 3 nC Gate-Drain Charge Qgd VDS=-30V,ID=-6A, VGS=10V - 3.5 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-6A - -1.2 V Diode Forward Current (Note 2) IS - - -6 A Reverse Recovery Time trr - 27.5 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =-6A di/dt = 100A/μs (Note3) - 30 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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