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NCE7580T Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE7580T Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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2 / 7 page  Wuxi NCE Power Semiconductor Co., Ltd Page v1.1 2 NCE7580T Pb Free Product http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to- Case (Note 2) RθJc 0.83 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 75 84 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±25V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 2.85 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A - 6.5 8 mΩ Forward Transconductance gFS VDS=5V,ID=30A - 66 - S Dynamic Characteristics (Note4) Input Capacitance Clss - 4400 - PF Output Capacitance Coss - 340 - PF Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz - 260 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 17.8 - nS Turn-on Rise Time tr - 11.8 - nS Turn-Off Delay Time td(off) - 56 - nS Turn-Off Fall Time tf VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω - 14.6 - nS Total Gate Charge Qg - 100 - nC Gate-Source Charge Qgs - 20 - nC Gate-Drain Charge Qgd VDS=24V,ID=40A, VGS=10V - 30 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=40A - - 1.2 V Diode Forward Current (Note 2) IS - - 80 A Reverse Recovery Time trr - 35.6 50 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 75A di/dt = 100A/μs (Note3) - - 56 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.3mH, ID=62A |
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