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100314 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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100314 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 8 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Above which the useful life may be impaired (Note 1) Storage Temperature (T STG) −65˚C to +150˚C Maximum Junction Temperture (T J) Ceramic +175˚C Pin Potential to Ground Pin (V EE) −7.0V to +0.5V Input Voltage (DC) V EE to +0.5V Output Current (DC Output HIGH) −50 mA ESD (Note 2) ≥2000V Recommended Operating Conditions Case Temperature (T C) Military −55˚C to +125˚C Supply Voltage (V EE) −5.7V to −4.2V Note 1: Absolute maximum ratings are those values beyond which the de- vice may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 2: ESD testing conforms to MIL-STD-883, Method 3015. Military Version DC Electrical Characteristics V EE = −4.2V to −5.7V, VCC = VCCA = GND, TC = −55˚C to +125˚C (Note 5) Symbol Parameter Min Typ Max Units TC Conditions Notes VOH Output HIGH Voltage −1025 −870 mV 0˚C to VIN = VIH (Max) or VIL (Min) Loading with 50 Ω to −2.0V +125˚C −1085 −870 mV −55˚C (Notes 3, 4, 5) VOL Output LOW Voltage −1830 −1620 mV 0˚C to +125˚C −1830 −1555 mV −55˚C VOHC Output HIGH −1035 mV 0˚C to VIN = VIH (Max) or VIL (Min) Loading with 50 Ω to −2.0V Voltage +125˚C −1085 mV −55˚C (Notes 3, 4, 5) VOLC Output LOW −1610 mV 0˚C to Voltage +125˚C −1555 mV −55˚C VBB Output Reference −1260 mV 0˚C to IVBB = 0 µA, VEE = 4.2V (Notes 3, 4, 5) Voltage +125˚C −1380 −1260 mV 0˚C to IVBB = −250 µA, VEE = −5.7V +125˚C (Notes 3, 4, 5) −1396 mV −55˚C IVBB = −350 µA, VEE = −5.7V VDIFF Input Voltage 150 mV −55˚C to Required for Full Output Swing (Notes 3, 4, 5) Differential +125˚C VCM Common Mode VCC − 2.0 VCC − 0.5 V −55˚C to (Notes 3, 4, 5) Voltage +125˚C VIH Single-Ended −1165 −870 mV −55˚C to Guaranteed HIGH Signal for All (Notes 3, 4, 5, 6) Input High Voltage +125˚C Inputs (with Dn tied to VBB) VIL Single-Ended −1830 −1475 mV −55˚C to Guaranteed LOW Signal for All (Notes 3, 4, 5, 6) Input Low Voltage +125˚C Inputs (with Dn tied to VBB) IIH Input HIGH Current 50 µA 0˚C to VIN = VIH (Max),Da–De = VBB, +125˚C Da–De = VIL (Min) (Notes 3, 4, 5) 70 µA −55˚C ICBO Input Leakage −10 µA −55˚C to VIN = VEE,Da–De = VBB, (Notes 3, 4, 5) Current +125˚C Da–De = VIL (Min) IEE Power Supply −65 −25 mA −55˚C to Da–De = VBB, (Notes 3, 4, 5) Current +125˚C Da–De = VIL (Min) Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures. Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8. Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8. Note 6: Guaranteed by applying specified input condition and testing VOH/VOL. www.national.com 3 |
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