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100325 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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100325 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 8 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Above which the useful life may be impaired. Storage Temperature (T STG) −65˚C to +150˚C Maximum Junction Temperature (T J) Ceramic +175˚C V EE Pin Potential to Ground Pin −7.0V to +0.5V V TTL Pin Potential to Ground Pin −0.5V to +6.0V Input Voltage (DC) V EE to +0.5V Voltage Applied to Output in HIGH State (with V CC = 0V) −0.5V to V CC Current Applied to Output in LOW State (Max) twice the rated I OL (mA) ESD (Note 2) ≥2000V Recommended Operating Conditions Case Temperature (T C) Military −55˚C to +125˚C Supply Voltage (V EE) −5.7V to −4.2V Note 1: Absolute maximum ratings are those values beyond which the de- vice may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 2: ESD testing conforms to MIL-STD-883, Method 3015. Military Version DC Electrical Characteristics V EE = −4.2V to −5.7V, VCC = VCCA = GND, TC = −55˚C to +125˚C, CL = 50 pF, VTTL = +4.5V to +5.5V Symbol Parameter Min Max Units TC Conditions Notes VBB Output Reference Voltage −1380 −1260 0˚C to +125˚C IVBB = −3 µA, VEE = −4.2V (Notes 3, 4, 5) mV IVBB = −2.1 mA VEE = −5.7V −1396 −1260 −55˚C IVBB = −3 mA VIH Input HIGH Voltage −1165 −870 mV −55˚C to +125˚C Guaranteed HIGH Signal for All Inputs (Notes 3, 4, 5, 6) (with One Input Tied to VBB) VIL Input LOW Voltage −1830 −1475 mV −55˚C to +125˚C Guaranteed LOW Signal for All Inputs (Notes 3, 4, 5, 6) (with One Input Tied to VBB) VOH Output HIGH Voltage 2.5 mV 0˚C to +125˚C IOH = −2.0 mA VIN = VIH (Max) (Notes 3, 4, 5) 2.4 −55˚C or VIL (Min) VOL Output LOW Voltage 0.5 mV −55˚C to +125˚C IOL = 20 mA VDIFF Input Voltage Differential 150 mV −55˚C to +125˚C Required for Full Output Swing (Notes 3, 4, 5) VCM Common Mode Voltage −2000 −500 mV −55˚C to +125˚C (Notes 3, 4, 5, 6) IIH Input HIGH Current 350 µA 0˚C to +125˚C VIN = VIH (Max),D0–D5 = VBB , (Notes 3, 4, 5) 500 −55˚C D0–D5 = VIL (Min) IIL Input LOW Current 0.50 µA −55˚C to +125˚C VIN = VIL (Min), D0–D5 = VBB (Notes 3, 4, 5) IOS Output Short Circuit −150 −60 mA −55˚C to +125˚C VOUT = GND (Notes 3, 4, 5) Current Test One Output at a Time ICEX Output HIGH 250 µA −55˚C to +125˚C VOUT = 5.5V (Notes 3, 4, 5) Leakage Current IEE VEE Power Supply Current −35 −12 mA −55˚C to +125˚C D0–D5 = VBB (Notes 3, 4, 5) ITTL VTTL Power Supply Current 65 mA −55˚C to +125˚C D0–D5 = VBB (Notes 3, 4, 5) Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures. Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8. Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, + 25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8. Note 6: Guaranteed by applying specified input condition and testing VOH/VOL. 3 www.national.com |
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