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BTA12-800C4G Datasheet(PDF) 1 Page - ON Semiconductor |
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BTA12-800C4G Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 6 page  © Semiconductor Components Industries, LLC, 2012 April, 2012 − Rev. 1 1 Publication Order Number: BTA12−600C4/D BTA12-600C4G, BTA12-800C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 V • On-State Current Rating of 12 Amperes RMS at 85°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 100 V/ms minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 6.0 A/ms minimum at 125°C • Internally Isolated (2500 VRMS) • Indicates UL Registered — File #E69369 • These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTA12−600C4G BTA12−800C4G VDRM, VRRM 600 800 V On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 85°C) IT(RMS) 12 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM 120 A Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2sec Peak Gate Current (TJ = 125°C, t = 20ms) IGM 2.0 A Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) PGM 20 W Average Gate Power (TJ = 125°C) PG(AV) 1.0 W Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) Viso 2500 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. TRIACS 12 AMPERES RMS 600 thru 800 VOLTS TO−220AB CASE 221A STYLE 12 1 http://onsemi.com BTA12−xCG AYWW MARKING DIAGRAM x = 6 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 2 3 Device Package Shipping ORDERING INFORMATION BTA12−600C4G TO−220AB (Pb−Free) 50 Units / Rail PIN ASSIGNMENT 1 2 3 Gate Main Terminal 1 Main Terminal 2 4 No Connection MT1 G MT2 BTA12−800C4G TO−220AB (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semicon- ductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 4 |
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