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STK611-721-E Datasheet(PDF) 2 Page - ON Semiconductor |
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STK611-721-E Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 9 page STK611-721-E No.A1718-2/9 Specifications Absolute Maximum Ratings at Tc = 25 °C Parameter Symbol Conditions Ratings unit Supply voltage VCC + to -, surge < 450V *1 450 V Collector-emitter voltage VDS + to U (V, W) or U (V, W) to - 600 V Output current IO +, -, U, V, W terminal current ±2A Output peak current Iop +, -, U, V, W terminal current P.W. = 100 μs ±4A Pre-driver voltage VD1, 2, 3, 4 VB1 to U, VB2 to V, VB3 to W, VDD to VSS *2 20 V Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3 terminal 0 to 15 V FAULT/EN terminal voltage VFAULT FAULT/EN terminal 20 V ITRIP terminal voltage VITRIP ITRIP terminal 5 V Maximum power dissipation Pd MOSFET/1 channel 16.6 W Junction temperature Tj MOSFET 150 °C Storage temperature Tstg -40 to +125 °C Operating substrate temperature Tc H-IC case temperature -20 to +100 °C Tightening torque A screw part *3 0.6 N •m Reference voltage is “-” terminal = “VSS” terminal voltage unless otherwise specified. *1 Surge voltage developed by the switching operation due to the wiring inductance between “+” and “-” terminals. *2 Terminal voltage : VD1=VB1 to U, VD2=VB2 to V, VD3=VB3 to W, VD4=VDD to VSS. *3 Flatness of the heat-sink should be 0.15mm and below. Electrical Characteristics at Tc=25 °C, VD=15V Parameter Symbol Conditions Test circuit min typ max unit Power output section Drain-Source Leakage current IDSS VDS = 600V Fig.1 0.1 mA Drain-Source On Resistance RDS(ON) ID = 2A Fig.2 4 Ω Diode forward voltage VSD ID = -2A Fig.3 1.5 V Junction to case thermal resistance θj-c(T) MOSFET 7.5 °C/W Control (Pre-driver) section VD1, 2, 3 = 15V 0.05 0.2 Pre-driver power dissipation ID VD4 = 15V Fig.4 1.4 4.0 mA Input ON threshold voltage Vinth(on) 1.5 2.1 2.5 V Input OFF threshold voltage Vinth(off) HIN1, HIN2, HIN3, LIN1, LIN2, LIN3 to VSS 0.8 1.3 1.5 V FAULT/EN clearness delay time FLTCLR After each protection operation ending 8 ms Protection section Pre-drive power supply low voltage protection voltage UVLO 8 9.8 V Resistance for substrate temperature monitors Rt Resistance between TH and VSS terminals 90 100 110 k Ω Fault/EN terminal input current IOSD VFault = 0.15V 2 mA ITRIP threshold voltage VITRIP 0.41 0.465 0.52 V tON 0.8 Switching time tOFF IO = 2A Inductive load Fig.5 1.5 μs Reference voltage is “-” terminal = “Vss” terminal voltage unless otherwise specified. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
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