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NCP81074ADR2G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP81074ADR2G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 12 page NCP81074A, NCP81074B www.onsemi.com 4 RECOMMENDED OPERATING CONDITIONS Parameter Rating Unit VDD supply Voltage 4.5 to 20 V IN+, IN− input voltages −5 to 20 V Junction Temperature Range −40 to +140 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 1. THERMAL INFORMATION Package Theta JA ( 5C/W) Theta JC ( 5C/W) DFN−8 2x2 80.3 11.9 SOIC−8 115 50 Table 2. ELECTRICAL CHARACTERISTICS (Note 1) (Typical values: VDD =12V, 1uF from VDD to GND,TA = TJ = −40 5C to 1405C, typical at TAMB = 255C, unless otherwise specified) Parameter SYMBOL Test Conditions MIN TYP MAX Unit SUPPLY VOLTAGE VDD Under Voltage Lockout (rising) VCCR VDD rising 3.7 3.9 4.1 V VDD Under Voltage Lockout (Falling) VCCF VDD falling 3.4 3.6 3.8 V VDD Under Voltage Lockout (hysteresis) VCCH 300 mV Operating Current (no switching) IDD 1.2 2 mA VDD Under Voltage Lockout to Output Delay (Note 1) VDD rising 10 ms INPUTS NCP81074A High Threshold VthH Input rising from logic low 1.9 2.1 2.3 V NCP81074A Low Threshold VthL Input falling from logic high 1.1 1.3 1.5 V VIN_HYS Input Signal Hysteresis 0.8 V NCP81074B High Threshold VthH Input rising from logic low (VDD = 8 V to 12 V) VDD −3.5 VDD −3.1 VDD −2.7 V NCP81074B Low Threshold VthL Input falling from logic high (VDD = 8 V to 12 V) GND +2.6 GND +2.9 GND +3.2 V IN− Pull−up Resistor Rin− 200 k W IN+ Pull−Down Resistor Rin+ 200 k W OUTPUTS Output Resistance High ROH IOUT = −10 mA 0.4 0.8 W Output Resistance Low ROL IOUT = +10 mA 0.4 0.8 W Peak Source Current(2) ISource OUT = GND 200 ns Pulse 10 A Miller Plateau Source Current(2) ISource OUT = 5.0 V 200 ns Pulse 7 A Peak Sink Current(2) ISink OUT = VDD 200 ns Pulse 10 A Miller Plateau Sink Current(2) ISink OUT = 5.0 V 200 ns Pulse 7 A |
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