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71V12415TYGI8 Datasheet(PDF) 5 Page - Integrated Device Technology |
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71V12415TYGI8 Datasheet(HTML) 5 Page - Integrated Device Technology |
5 / 8 page 6.42 IDT71V124SA, 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Commercial and Industrial Temperature Ranges 5 NOTES: 1. WE is HIGH for Read Cycle. 2. Device is continuously selected, CS is LOW. 3. Address must be valid prior to or coincident with the later of CS transition LOW; otherwise tAA is the limiting parameter. 4. OE is LOW. 5. Transition is measured ±200mV from steady state. Timing Waveform of Read Cycle No. 1(1) Timing Waveform of Read Cycle No. 2(1, 2, 4) ADDRESS 3873 drw 05 OE CS DATAOUT (5) (5) (5) (5) DATAOUT VALID HIGH IMPEDANCE tAA tRC tOE tACS tOLZ tCHZ tCLZ (3) tOHZ . DATAOUT ADDRESS 3873 drw 06 tRC tAA tOH tOH DATAOUT VALID PREVIOUS DATAOUT VALID . |
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