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LM359M Datasheet(PDF) 2 Page - Texas Instruments |
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LM359M Datasheet(HTML) 2 Page - Texas Instruments |
2 / 34 page (1) Mirror gain is the current gain of the current mirror which is used as the non-inverting input. ΔMirror Gain is the % change in LM359 SNOSBT4C – MAY 1999 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Supply Voltage 22 VDC or ±11 VDC D Package 1W Power Dissipation(3) NFF Package 750 mW D Package +150°C Maximum TJ NFF Package +125°C 147°C/W still air D Package θjA 110°C/W with 400 linear feet/min air flow Thermal Resistance 100°C/W still air NFF Package θjA 75°C/W with 400 linear feet/min air flow Input Currents, IIN(+) or IIN(−) 10 mADC Set Currents, ISET(IN) or ISET(OUT) 2 mADC Operating Temperature Range 0°C to +70°C Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering, 10 sec.) 260°C PDIP Package Soldering (10 sec.) 260°C Soldering Information Vapor Phase (60 sec.) 215°C SOIC Package Infrared (15 sec.) 220°C (1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. (3) See Figure 22. Electrical Characteristics ISET(IN) = ISET(OUT) = 0.5 mA, Vsupply = 12V, TA = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Open Loop Voltage Vsupply = 12V, RL = 1k, f = 100 Hz 62 72 dB Gain TA = 125°C 68 dB Bandwidth Unity Gain RIN = 1 kΩ, Ccomp = 10 pF 15 30 MHz Gain Bandwidth Product, RIN = 50Ω to 200Ω 200 400 MHz Gain of 10 to 100 Unity Gain RIN = 1 kΩ, Ccomp = 10 pF 30 Slew Rate V/ μs Gain of 10 to 100 RIN < 200Ω 60 Amplifier to Amplifier f = 100 Hz to 100 kHz, RL = 1k −80 dB Coupling at 2 mA IIN(+), ISET = 5 μA, TA = 25°C 0.9 1.0 1.1 μA/μA Mirror Gain(1) at 0.2 mA IIN(+), ISET = 5 μA Over Temp. 0.9 1.0 1.1 μA/μA at 20 μA IIN(+), ISET = 5 μA Over Temp. 0.9 1.0 1.1 μA/μA ΔMirror Gain(1) at 20 μA to 0.2 mA IIN(+) Over Temp, ISET = 5 μA 3 5 % Inverting Input, TA = 25°C 8 15 μA Input Bias Current Over Temp. 30 μA Input Resistance ( βre) Inverting Input 2.5 k Ω Output Resistance IOUT = 15 mA rms, f = 1 MHz 3.5 Ω AI for two different mirror currents at any given temperature. 2 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM359 |
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