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S846E200M1 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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2 / 2 page Product name s846 Micro SAS DATA SHEET ENTERPRISE SOLID-STATE DRIVES Features & Benefits Specifications Model / Part No. S846E200M1 / 0T00173 S846E400M1 / 0T00185 Configuration Interface Micro SAS 6Gb/s Capacity (GB1) at 512 bytes/sector 400 / 200 Form factor 1.8-inch Flash memory technology Multi Level Cell (MLC) Availability Dual Port Performance Read throughput (max MB/s, sequential 64K) Up to 520 Write throughput (max MB/s, sequential 64K) Up to 380 Read IOPS (max IOPS, random 4K) 65,000 Write IOPS (max IOPS, random 4K) 37,000 Encryption 256-bit Yes Endurance Drive writes per day for 5 years (max) 28 Lifetime PB1 written (max) 20.8 Physical z-height (mm) 5 Dimensions (width x depth, mm) 54 x 78.5 Weight (g) < 40 Environmental Operating temperature 0º to 60º C Non-operating temperature -25° to 85° C Humidity Non-condensing 5-95% Shock (half-sine wave) 350G Altitude (ft) -1,000 to 80,000 Compliance Lead free (RoHS) © 2014-2015 HGST, a Western Digital company, 3403 Yerba Buena Road, San Jose, CA 95135 USA. Produced in the United States 8/14, revised 8/15. All rights reserved. CellCare is a registered trademark, and Secure Array of Flash Elements is a trademark, of HGST, Inc. and its affiliates in the United States and/or other countries. HGST trademarks are intended and authorized for use only in countries and jurisdictions in which HGST has obtained the rights to use, market and advertise the brand. Contact HGST for additional information. HGST shall not be liable to third parties for unauthorized use of this document or unauthorized use of its trademarks. References in this publication to HGST’s products, programs or services do not imply that HGST intends to make these available in all countries in which it operates. Product specifications provided are sample specifications and do not constitute a warranty. Information is true as of the date of publication and is subject to change. Actual specifications for unique part numbers may vary. Please visit the Support section of our website www.hgst.com/support for additional information on product specifications. Photographs may show design models. DS20-EN-US-0815-02 1 One gigabyte (GB) is equal to one billion bytes, one terabyte (TB) is equal to 1,000GB (one trillion bytes), and one petabyte (PB) is equal to 1,000TB (one quadrillion bytes) when referring to solid-state drive or hard drive capacity. Accessible capacity will vary from the stated capacity due to formatting and partitioning of the drive, the computer’s operating system, and other factors. Performance Capacity Reliability Encryption Feature/function • SAS interface in a 1.8-inch form factor • MLC NAND Flash memory • High throughput • Power/performance efficiency • 400GB • 200GB • Secure Array of Flash Elements™ (SAFE) technology • CellCare® technology Self-encrypting drive (SED) Benefit • Industry’s gold standard for enterprise performance Micro SAS SSDs supporting servers and Tier-0 storage applications in the standard small form factor • Highest write performance and endurance • Random transactional performance up to 65,000 sustained IOPS, with sustained random or sequential large block transfers up to 520MB/s Improved performance with higher power option • Provides the ability to recover from NAND Flash page, block, die and chip failures, and maximizes the Mean Time Between Failure (MTBF) and Mean Time To Data Loss (MTTDL) • Extends the life of Flash media to deliver enterprise-class endurance through advanced signal processing and adaptive Flash management algorithms Adds hardware-based encryption for data security and protection |
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