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S846E200M1 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # S846E200M1
Description  ENTERPRISE SOLID-STATE DRIVES
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S846E200M1 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

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Product name
s846 Micro SAS
DATA SHEET
ENTERPRISE SOLID-STATE DRIVES
Features & Benefits
Specifications
Model / Part No.
S846E200M1 / 0T00173
S846E400M1 / 0T00185
Configuration
Interface
Micro SAS 6Gb/s
Capacity (GB1) at 512 bytes/sector
400 / 200
Form factor
1.8-inch
Flash memory technology
Multi Level Cell (MLC)
Availability
Dual Port
Performance
Read throughput (max MB/s, sequential 64K)
Up to 520
Write throughput (max MB/s, sequential 64K)
Up to 380
Read IOPS (max IOPS, random 4K)
65,000
Write IOPS (max IOPS, random 4K)
37,000
Encryption
256-bit
Yes
Endurance
Drive writes per day for 5 years (max)
28
Lifetime PB1 written (max)
20.8
Physical
z-height (mm)
5
Dimensions (width x depth, mm)
54 x 78.5
Weight (g)
< 40
Environmental
Operating temperature
0º to 60º C
Non-operating temperature
-25° to 85° C
Humidity
Non-condensing 5-95%
Shock (half-sine wave)
350G
Altitude (ft)
-1,000 to 80,000
Compliance
Lead free (RoHS)
© 2014-2015 HGST, a Western Digital company, 3403 Yerba Buena Road, San Jose,
CA 95135 USA. Produced in the United States 8/14, revised 8/15. All rights reserved.
CellCare is a registered trademark, and Secure Array of Flash Elements is a trademark, of
HGST, Inc. and its affiliates in the United States and/or other countries.
HGST trademarks are intended and authorized for use only in countries and jurisdictions
in which HGST has obtained the rights to use, market and advertise the brand.
Contact HGST for additional information. HGST shall not be liable to third parties for
unauthorized use of this document or unauthorized use of its trademarks.
References in this publication to HGST’s products, programs or services do not imply that HGST intends to make these available in all countries in
which it operates.
Product specifications provided are sample specifications and do not constitute a warranty. Information is true as of the date of publication and is
subject to change. Actual specifications for unique part numbers may vary.
Please visit the Support section of our website www.hgst.com/support for additional information on product specifications. Photographs may show
design models.
DS20-EN-US-0815-02
1
One gigabyte (GB) is equal to one billion bytes, one terabyte (TB) is equal to 1,000GB (one trillion bytes), and
one petabyte (PB) is equal to 1,000TB (one quadrillion bytes) when referring to solid-state drive or hard drive
capacity. Accessible capacity will vary from the stated capacity due to formatting and partitioning of the drive,
the computer’s operating system, and other factors.
Performance
Capacity
Reliability
Encryption
Feature/function
• SAS interface in a 1.8-inch form factor
• MLC NAND Flash memory
• High throughput
• Power/performance efficiency
• 400GB
• 200GB
• Secure Array of Flash Elements™ (SAFE) technology
• CellCare® technology
Self-encrypting drive (SED)
Benefit
• Industry’s gold standard for enterprise performance Micro SAS SSDs supporting
servers and Tier-0 storage applications in the standard small form factor
• Highest write performance and endurance
• Random transactional performance up to 65,000 sustained IOPS, with sustained
random or sequential large block transfers up to 520MB/s
Improved
performance
with higher
power option
• Provides the ability to recover from NAND Flash page, block, die and chip
failures, and maximizes the Mean Time Between Failure (MTBF) and Mean
Time To Data Loss (MTTDL)
• Extends the life of Flash media to deliver enterprise-class endurance through
advanced signal processing and adaptive Flash management algorithms
Adds hardware-based encryption
for data security and protection


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