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EFM8UB20F32G-A-QFN32 Datasheet(PDF) 11 Page - Silicon Laboratories |
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EFM8UB20F32G-A-QFN32 Datasheet(HTML) 11 Page - Silicon Laboratories |
11 / 50 page Parameter Symbol Test Condition Min Typ Max Unit ADC0 Supply Current IADC Operating at 500 ksps VDD = 3.0 V — 750 1000 μA On-chip Precision Reference IVREFP — 75 — µA Temperature Sensor ITSENSE — 35 — μA Comparator 0 (CMP0, CMP1) ICMP CPMD = 11 — 1 — μA CPMD = 10 — 4 — μA CPMD = 01 — 10 — μA CPMD = 00 — 20 — μA Voltage Supply Monitor (VMON0) IVMON — 15 50 μA Regulator Bias Currents IVREG Both Regulators in Normal Mode — 200 — μA Both Regulators in Low Power Mode — 100 — μA 5 V Regulator Off, Internal LDO in Low Power Mode — 150 — μA USB (USB0) Full-Speed IUSB Active — 8 — mA Note: 1. Currents are additive. For example, where IDD is specified and the mode is not mutually exclusive, enabling the functions increa- ses supply current by the specified amount. 2. Includes supply current from regulators, supply monitor, and High Frequency Oscillator. 3. Includes supply current from regulators, supply monitor, and Low Frequency Oscillator. Table 4.3. Reset and Supply Monitor Parameter Symbol Test Condition Min Typ Max Unit VDD Supply Monitor Threshold VVDDM 2.60 2.65 2.70 V VDD Ramp Time tRMP Time to VDD > 2.7 V — — 1 ms Reset Delay from non-POR source tRST Time between release of reset source and code execution — — 250 μs RST Low Time to Generate Reset tRSTL 15 — — μs Missing Clock Detector Response Time (final rising edge to reset) tMCD FSYSCLK >1 MHz 80 580 800 μs VDD Supply Monitor Turn-On Time tMON — — 100 μs Table 4.4. Flash Memory Parameter Symbol Test Condition Min Typ Max Units Write Time1 tWRITE One Byte 10 15 20 μs Erase Time1 tERASE One Page 10 15 22.5 ms VDD Voltage During Programming2 VPROG 2.7 — 3.6 V Endurance (Write/Erase Cycles) NWE 10k 100k — Cycles EFM8UB2 Data Sheet Electrical Specifications silabs.com | Smart. Connected. Energy-friendly. Rev. 1.2 | 10 |
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