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TPA3140D2PWP Datasheet(PDF) 6 Page - Texas Instruments |
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TPA3140D2PWP Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 40 page  TPA3140D2 SLOS882A – JANUARY 2015 – REVISED APRIL 2015 www.ti.com 8.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN MAX UNIT VCC Supply voltage PVCC, AVCC 4.5 14.4 V VIH High-level input voltage SD, 1SPW 2 AVCC V VIL Low-level input voltage SD, 1SPW 0.8 V VOL Low-level output voltage FAULT, RPULL-UP=100k, PVCC=14.4V 0.8 V IIH High-level input current SD, 1SPW, VI = 2V, AVCC = 12 V 50 µA IIL Low-level input current SD, 1SPW, VI = 0.8 V, AVCC = 12 V 5 µA TA Operating free-air temperature(1) –40 85 °C TJ Operating junction temperature(1) -40 150 °C (1) The TPA3140D2 incorporates an exposed thermal pad on the underside of the chip. This acts as a heatsink, and it must be connected to a thermally dissipating plane for proper power dissipation. Failure to do so may result in the device going into thermal protection shutdown. See TI Technical Briefs SLMA002 for more information about using the TSSOP thermal pad. 8.4 Thermal Information PWP (HTSSOP) THERMAL METRIC(1) UNIT 28 PINS RθJA Junction-to-ambient thermal resistance 37.5 RθJC(top) Junction-to-case (top) thermal resistance 19.4 RθJB Junction-to-board thermal resistance 16.6 °C/W ψJT Junction-to-top characterization parameter 0.6 ψJB Junction-to-board characterization parameter 16.4 RθJC(bot) Junction-to-case (bottom) thermal resistance 2.8 (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 8.5 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DC CHARACTERISTICS, TA = 25°C, AVCC = PVCC = 12 V, RL = 6 Ω, using the TPA3140D2 EVM which is available at ti.com. (unless otherwise noted) | VOS | Class-D output offset voltage (measured VI = 0 V, Gain = 36 dB 1.5 15 mV differentially) ICC Quiescent supply current SD = 2 V, no load, 10µF+680nF Output Filter 35 40 mA ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load 40 60 µA rDS(on) Drain-source on-state resistance IO = 500 mA, TJ = 25°C High Side 240 m Ω Excluding Metal and Low side 240 Bond Wire Resistance G Gain GAIN = 0 V (GND) 19 20 21 dB GAIN = 2.3 V (1/3·GVDD) 25 26 27 GAIN = 4.6 V (2/3·GVDD) 31 32 33 GAIN = 6.9 V (GVDD) 35 36 37 ton Turn-on time SD = 2 V 14 ms tOFF Turn-off time SD = 0.8 V 2.5 µs GVDD Gate drive supply IGVDD = 2mA 6.4 6.9 7.4 V tDCDET DC detect time VRINN = 3.1V and VRINN = 2.9V, or VRINN = 2.9V and VRINN 950 ms = 3.1V 6 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: TPA3140D2 |
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