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AL9902S16-13 Datasheet(PDF) 9 Page - Diodes Incorporated |
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AL9902S16-13 Datasheet(HTML) 9 Page - Diodes Incorporated |
9 / 18 page AL9902 Document number: DS37878 Rev. 1 - 2 9 of 18 www.diodes.com July 2015 © Diodes Incorporated AL9902 Typical Characteristics (cont.) Internal MOSFET V , SOURCE-DRAIN VOLTAGE (V) SD Figure 9 Diode Forward Voltage vs. Current 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.3 0.6 0.9 1.2 1.5 T = 150°C A T = 125°C A T = 85°C A T = -55°C A T = 25°C A Diode Forward Voltage vs. Current V , DRAIN-SOURCE VOLTAGE (V) DS Figure 10Typical Junction Capacitance 1 10 100 1000 0 5 10 15 20 25 30 35 40 f = 1MHz C iss Coss Crss Typical Junction Capacitance Q (nC) g, TOTAL GATE CHARGE Figure 11 Gate Charge 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 V = 520V I = A DS D 2 Gate Charge V , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area DS 0.001 0.01 0.1 1 10 1 10 100 1000 R Limited DS(on) T = 150°C T = 25°C V = 10V Single Pulse J(max) A GS DUT on 1 * MRP Board DC P = 10s W P = 1s W P = 100ms W P = 10ms W P = 1ms W P = 100µs W SOA, Safe Operation Area |
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