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BC818-16W Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BC818-16W Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page BC817W, BC818W 1 Nov-29-2001 NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (PNP) 1 3 VSO05561 2 Type Marking Pin Configuration Package BC817-16W BC817-25W BC817-40W BC818-16W BC818-25W BC818-40W 6As 6Bs 6Cs 6Es 6Fs 6Gs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 Maximum Ratings Parameter Symbol BC817W BC818W Unit Collector-emitter voltage VCEO 45 25 V Collector-base voltage VCBO 50 30 Emitter-base voltage VEBO 5 5 DC collector current IC 500 mA Peak collector current ICM 1 A Base current mA 100 IB Peak base current IBM 200 Total power dissipation, TS = 130 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 80 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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