BCR22PN datasheet(2/5 Pages) INFINEON

Part #	BCR22PN

Description	NPN/PNP Silicon Digital Transistor Array

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Manufacturer	INFINEON [Infineon Technologies AG]

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BCR22PN

Dec-13-2001

2

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 100 µA, IB = 0

V(BR)CEO

50

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0

V(BR)CBO

50

-

Collector cutoff current

VCB = 40 V, IE = 0

ICBO

-

100

nA

Emitter cutoff current

VEB = 10 V, IC = 0

IEBO

-

350

µA

DC current gain 1)

IC = 5 mA, VCE = 5 V

hFE

50

-

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

VCEsat

-

0.3

V

Input off voltage

IC = 100 µA, VCE = 5 V

Vi(off)

0.8

-

1.5

Input on Voltage

IC = 2 mA, VCE = 0.3 V

Vi(on)

1

-

2.5

Input resistor

R1

15

22

29

k

Resistor ratio

R1/R2

0.9

1

1.1

-

AC Characteristics

Transition frequency

IC = 10 mA, VCE = 5 V, f = 100 MHz

fT

-

130

-

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

3

-

pF

1) Pulse test: t < 300

s; D < 2%

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