BFG 235

Oct-27-1999

1

NPN Silicon RF Transistor

For low-distortion broadband output amplifier

stages in antenna and telecommunication

systems up to 2 GHz at collector currents from

120 mA to 250 mA

Power amplifiers for DECT and PCN systems

Integrated emitter ballast resistor

VPS05163

1

2

3

4

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFG 235

BFG235

1 = E

2 = B

3 = E

4 = C

SOT-223

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

15

V

Collector-emitter voltage

25

Collector-base voltage

25

Emitter-base voltage

2

Collector current

300

mA

Base current

40

Total power dissipation

2

W

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

Thermal Resistance

Junction - soldering point

35

K/W