BFN17 datasheet(1/5 Pages) INFINEON

Part #	BFN17

Description	PNP Silicon High-Voltage Transistors

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Manufacturer	INFINEON [Infineon Technologies AG]

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BFN17, BFN19

Nov-30-2001

1

PNP Silicon High-Voltage Transistors

Suitable for video output stages in TV sets and

switching power supplies

High breakdown voltage

Low collector-emitter saturation voltage

Complementary types: BFN16, BFN18 (NPN)

2

1

3

VPS05162

2

Type

Marking

Pin Configuration

Package

BFN17

BFN19

DG

DH

1 = B

2 = C

3 = E

SOT89

Maximum Ratings

Parameter

Symbol

BFN17

BFN19

Unit

Collector-emitter voltage

VCEO

250

300

V

Collector-base voltage

VCBO

250

300

Emitter-base voltage

VEBO

5

DC collector current

IC

200

mA

500

ICM

Peak collector current

Base current

IB

100

IBM

200

Peak base current

W

Ptot

Total power dissipation, TS = 130 °C

1

Junction temperature

150

°C

Tj

Tstg

-65 ... 150

Storage temperature

Thermal Resistance

Junction - soldering point1)

RthJS

20

K/W

1For calculation of R

thJA please refer to Application Note Thermal Resistance

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BFN17 Datasheet(PDF) 1 Page - Infineon Technologies AG

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