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BFN17 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFN17 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page BFN17, BFN19 Nov-30-2001 1 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN16, BFN18 (NPN) 2 1 3 VPS05162 2 Type Marking Pin Configuration Package BFN17 BFN19 DG DH 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E SOT89 SOT89 Maximum Ratings Parameter Symbol BFN17 BFN19 Unit Collector-emitter voltage VCEO 250 300 V Collector-base voltage VCBO 250 300 Emitter-base voltage VEBO 5 5 DC collector current IC 200 mA 500 ICM Peak collector current Base current IB 100 IBM 200 Peak base current W Ptot Total power dissipation, TS = 130 °C 1 Junction temperature 150 °C Tj Tstg -65 ... 150 Storage temperature Thermal Resistance Junction - soldering point1) RthJS 20 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance |
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Similar Description - BFN17 |
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