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BFN25 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFN25 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page BFN25, BFN27 Nov-30-2001 1 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN24, BFN26 (NPN) 1 2 3 VPS05161 Type Marking Pin Configuration Package BFN25 BFN27 FKs FLs 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SOT23 SOT23 Maximum Ratings Parameter Symbol BFN25 BFN27 Unit Collector-emitter voltage VCEO 250 300 V Collector-base voltage VCBO 250 300 Emitter-base voltage VEBO 5 5 DC collector current IC 200 mA Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 74 °C Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance |
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Similar Description - BFN25 |
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