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BGA416 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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BGA416 Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 8 page BGA416 Data sheet 5 Maximum Ratings Notes: All Voltages refer to GND-Node 1) Device current is equal to current into pin RFout 2) T S is measured on the ground lead at the soldering point Parameter Symbol Value Unit Voltage at pin RFout V OUT 6V Current into pin RFin I IN 0.5 mA Device current 1) I D 20 mA Input power P IN 8dBm Total power dissipation, T S < 123°C 2) P tot 100 mW Junction temperature T j 150 °C Ambient temperature range T A -65 ... +150 °C Storage temperature range T STG -65 ... +150 °C Thermal resistance: junction-soldering point R th JS 270 K/W Electrical Characteristics at T A=25°C (measured in test circuit specified in fig. 1) V CC=3V, unless otherwise specified Parameter Symbol min. typ. max. Unit Maximum available power gain f=0.9GHz f=1.8GHz G MA 23 14 dB Insertion power gain f=0.9GHz f=1.8GHz |S 21| 2 17 11 dB Reverse isolation f=0.9GHz f=1.8GHz |S 12|62 40 dB Noise figure (Z S=50Ω) f=0.9GHz f=1.8GHz F 50 Ω 1.3 1.6 dB Output power at 1dB gain compression (Z S=ZL=50Ω) f=0.9GHz f=1.8GHz P -1dB -3 -3 dBm Output third order intercept point (Z S=ZL=50Ω) f=0.9GHz f=1.8GHz OIP 3 14 14 dBm Device current I D 5.5 mA |
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