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TS1107 Datasheet(PDF) 9 Page - Silicon Laboratories |
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TS1107 Datasheet(HTML) 9 Page - Silicon Laboratories |
9 / 22 page Parameter Symbol Conditions Min Typ Max Units Output Range VOUT(min,max) IOUT = ±150 μA 0.2 — VDD – 0.2 V Sign Comparator Parameters Output Low Voltage VSIGN_OL VDD = 1.8 V, ISINK = 35 μA — — 0.2 V Output High Voltage VSIGN_OH VDD = 1.8 V, ISOURCE = 35 μA VDD – 0.2 — — V Comparator Input Bias Current ICIN–_BIAS CIN– — 0.3 — nA Input Bias Current ICIN+_BIAS CIN+ — 0.3 — nA Input referred DC offset VC_OS –40 °C < TA < +85 °C — — ±4 mV Input Common Mode Range VC_CM 0.4 — VDD V COUT Output Range VCOUT(min,max) ICOUT = ±500 μA; VDD = 1.7 V 0.4 — VDD – 0.4 V CLATCH Input Voltage CLATCHLo Low CMOS Logic Level — — 0.4 V CLATCHHi High CMOS Logic Level VDD – 0.4 — — V FET Control (TS1110 Only) FET Leakage IFET_Leakage TA = +25 °C — — 4.5 nA FET Sourcing Current IFET_Source(max) TA = +25 °C — 3.2 17.4 mA FET Internal On Resistance RFET_ON TA = +25 °C — 487 794 Ω VREF Divider VREF Activation voltage VREF(min) VREF Rising edge — — 0.9 V Resistor on VREF RVREF — 9.2 — MΩ VBIAS VVBIAS VREF = 1 V 0.495 0.5 0.505 V Note: 1. RS+ = RS– = 3.6 V; VSENSE =(VRS+ – VRS–) = 0 V; VDD = 3 V; VBIAS = 1.5 V; CIN+ = 0.75 V; VREF = GND; CLATCH = GND; RFET = 1 MΩ; FILT connected to 4 kΩ and 470 nF in series to GND. TA = TJ = –40 °C to +85 °C unless otherwise noted. Typical values are at TA=+25 °C. 2. Extrapolated to VOUT = VFILT; IRS+ + IRS– is the total current into the RS+ and the RS– pins. 3. Input offset voltage VOS is extrapolated from a VOUT(+) measurement with VSENSE set to +1 mV and a VOUT(–) measurement with VSENSE set to –1 mV; average VOS = (VOUT(–) – VOUT(+))/(2 x GAIN). 4. Amplitude of VSENSE lower or higher than VOS required to cause the comparator to switch output states. 5. Gain error is calculated by applying two values for VSENSE and then calculating the error of the actual slope vs. the ideal transfer characteristic. For GAIN = 20 V/V, the applied VSENSE for GE± is ±25 mV and ±60 mV. For GAIN = 200 V/V, the applied VSENSE for GE± is ±2.5 mV and ±6 mV TS1107/10 Data Sheet Electrical Characteristics silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 8 |
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