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TS1107 Datasheet(PDF) 9 Page - Silicon Laboratories

Part # TS1107
Description  Power Management Systems
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Manufacturer  SILABS [Silicon Laboratories]
Direct Link  http://www.silabs.com
Logo SILABS - Silicon Laboratories

TS1107 Datasheet(HTML) 9 Page - Silicon Laboratories

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Parameter
Symbol
Conditions
Min
Typ
Max
Units
Output Range
VOUT(min,max)
IOUT = ±150 μA
0.2
VDD –
0.2
V
Sign Comparator Parameters
Output Low Voltage
VSIGN_OL
VDD = 1.8 V, ISINK = 35 μA
0.2
V
Output High Voltage
VSIGN_OH
VDD = 1.8 V, ISOURCE = 35 μA VDD – 0.2
V
Comparator
Input Bias Current
ICIN–_BIAS
CIN–
0.3
nA
Input Bias Current
ICIN+_BIAS
CIN+
0.3
nA
Input referred DC offset
VC_OS
–40 °C < TA < +85 °C
±4
mV
Input Common Mode Range
VC_CM
0.4
VDD
V
COUT Output Range
VCOUT(min,max) ICOUT = ±500 μA; VDD = 1.7 V
0.4
VDD –
0.4
V
CLATCH Input Voltage
CLATCHLo
Low CMOS Logic Level
0.4
V
CLATCHHi
High CMOS Logic Level
VDD – 0.4
V
FET Control (TS1110 Only)
FET Leakage
IFET_Leakage
TA = +25 °C
4.5
nA
FET Sourcing Current
IFET_Source(max)
TA = +25 °C
3.2
17.4
mA
FET Internal On Resistance
RFET_ON
TA = +25 °C
487
794
Ω
VREF Divider
VREF Activation voltage
VREF(min)
VREF Rising edge
0.9
V
Resistor on VREF
RVREF
9.2
VBIAS
VVBIAS
VREF = 1 V
0.495
0.5
0.505
V
Note:
1. RS+ = RS– = 3.6 V; VSENSE =(VRS+ – VRS–) = 0 V; VDD = 3 V; VBIAS = 1.5 V; CIN+ = 0.75 V; VREF = GND; CLATCH = GND;
RFET = 1 MΩ; FILT connected to 4 kΩ and 470 nF in series to GND. TA = TJ = –40 °C to +85 °C unless otherwise noted. Typical
values are at TA=+25 °C.
2. Extrapolated to VOUT = VFILT; IRS+ + IRS– is the total current into the RS+ and the RS– pins.
3. Input offset voltage VOS is extrapolated from a VOUT(+) measurement with VSENSE set to +1 mV and a VOUT(–) measurement with
VSENSE set to –1 mV; average VOS = (VOUT(–) – VOUT(+))/(2 x GAIN).
4. Amplitude of VSENSE lower or higher than VOS required to cause the comparator to switch output states.
5. Gain error is calculated by applying two values for VSENSE and then calculating the error of the actual slope vs. the ideal transfer
characteristic. For GAIN = 20 V/V, the applied VSENSE for GE± is ±25 mV and ±60 mV. For GAIN = 200 V/V, the applied VSENSE
for GE± is ±2.5 mV and ±6 mV
TS1107/10 Data Sheet
Electrical Characteristics
silabs.com | Smart. Connected. Energy-friendly.
Rev. 1.0 | 8


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