BSO080P03S datasheet(2/9 Pages) INFINEON

Part #	BSO080P03S

Description	OptiMOS-P Small-Signal-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSO080P03S

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - soldering point

R thJS

-

35

K/W

Thermal resistance,

junction - ambient

R thJA

minimal footprint,

t p≤10 s

-

110

minimal footprint,

steady state

-

150

6 cm

2 cooling area1),

t p≤10 s

--

50

6 cm

2 cooling area1),

steady state

--

70

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=-250µA

-30

-

V

Gate threshold voltage

V GS(th)

V DS=V GS,

I D=-250 µA

-1

-1.5

-2.2

Zero gate voltage drain current

I DSS

V DS=-30 V, V GS=0 V,

T j=25 °C

-

-0.1

-1

µA

V DS=-30 V, V GS=0 V,

T j=125 °C

-

-10

-100

Gate-source leakage current

I GSS

V GS=-25 V, V DS=0 V

-

-10

-100

nA

Drain-source on-state resistance

R DS(on)

V GS=-10 V,

I D=-14.9 A

-

6.7

8.0

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=-14.9 A

22

43

-

S

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Values

Rev. 1.0

page 2

2004-01-21

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