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DAC8811IBDGKR Datasheet(PDF) 5 Page - Texas Instruments |
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DAC8811IBDGKR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 29 page 5 DAC8811 www.ti.com SLAS411D – NOVEMBER 2004 – REVISED FEBRUARY 2016 Product Folder Links: DAC8811 Submit Documentation Feedback Copyright © 2004–2016, Texas Instruments Incorporated (1) Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Input voltage VDD to GND –0.3 7 V V (IOUT) to GND –0.3 VDD + 0.3 V Digital input voltage GND –0.3 VDD + 0.3 V Reference voltage, VREF RFB to GND –25 25 V Operating temperature –40 105 °C Junction temperature, TJ 125 °C Storage temperature, Tstg –65 150 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings MAX UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V Charged device model (CDM), per JEDEC specification JESD22- C101(2) ±1000 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Supply voltage to GND 2.7 5.5 V Operating ambient temperature, TA –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.4 Thermal Information THERMAL METRIC(1) DAC8811 UNIT DGK (VSSOP) DRB (VSON) 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 169.6 46.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 64.2 61.3 °C/W RθJB Junction-to-board thermal resistance 90.3 22 °C/W ψJT Junction-to-top characterization parameter 7.7 1.1 °C/W ψJB Junction-to-board characterization parameter 88.8 22.1 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 3.8 °C/W |
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