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BSO615NV Datasheet(PDF) 4 Page - Infineon Technologies AG |
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BSO615NV Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 8 page  BSO 615NV Data Sheet 4 05.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit at Tj = 25 ˚C, unless otherwise specified min. typ. max. Dynamic Characteristics Gate charge at threshold VDD = 40 V, ID = 0.1 A, VGS = 1 V QG(th) - 0.25 0.3 nC Gate charge at Vgs=7V VDD = 40 V, ID = 3.1 A, VGS = 0 to 7 V Qg(7) 9.3 nC 7.4 - Gate charge total VDD = 40 V, ID = 3.1 A, VGS = 0 to 10 V Qg - 9.7 12 Gate plateau voltage VDD = 40 V, ID = 3.1 A V(plateau) - 4.7 - V Reverse Diode Inverse diode continuous forward current TA = 25 ˚C IS - - 3.1 A Inverse diode direct current,pulsed TA = 25 ˚C ISM - - 12.4 Inverse diode forward voltage VGS = 0 V, IF = 6.2 A VSD - 0.95 1.2 V Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs trr - 45 56 ns Reverse recovery charge VR = 30 V, IF=lS , diF/dt = 100 A/µs Qrr - 0.08 0.12 µC |
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