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BSO615NV Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BSO615NV Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 8 page ![]() BSO 615NV Data Sheet 7 05.99 Typ. transfer characteristics ID= f (VGS) parameter: tp = 80 µs VDS ≥ 2 x ID x RDS(on) max 0 1 2 3 4 5 V 7 VGS 0 2 4 6 8 10 A 14 Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS, ID = 20 µA -60 -20 20 60 100 V 160 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 min typ max Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD -1 10 0 10 1 10 2 10 A BSO 615NV T j = 25 ˚C typ T j = 25 ˚C (98%) T j = 150 ˚C typ T j = 150 ˚C (98%) |
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