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BSO615NV Datasheet(PDF) 8 Page - Infineon Technologies AG |
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BSO615NV Datasheet(HTML) 8 Page - Infineon Technologies AG |
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8 / 8 page  BSO 615NV Data Sheet 8 05.99 Avalanche Energy EAS = f (Tj) parameter: ID = 3.1 A, VDD = 25 V RGS = 25 Ω 20 40 60 80 100 120 ˚C 160 Tj 0 5 10 15 20 25 30 35 40 45 50 55 mJ 65 Typ. gate charge VGS = f (QGate) parameter: ID puls = 3.1 A 0 2 4 6 8 10 12 nC 15 QGate 0 2 4 6 8 10 12 V 16 BSO 615NV V 0,8 V 0,2 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 ˚C 180 Tj 54 56 58 60 62 64 66 68 V 72 BSO 615NV DS max DS max |
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