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BSO615NV Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSO615NV Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page ![]() Data Sheet 1 05.99 SIPMOS® Small-Signal-Transistor Features • Dual N Channel • Enhancement mode • Avalanche rated • dv/dt rated Product Summary Drain source voltage VDS 60 V Drain-Source on-state resistance RDS(on) 0.12 Ω Continuous drain current ID 3.1 A Type Package Ordering Code BSO 615NV SO 8 Q67041-S2844 Continuous drain current, one channel active ID 3.1 A Pulsed drain current, one channel active TA = 25 ˚C 12.4 IDpulse Avalanche energy, single pulse ID = 3.1 A, VDD = 25 V, RGS = 25 Ω mJ EAS 60 Avalanche current,periodic limited by Tjmax IAR 3.1 A Avalanche energy, periodic limited by Tjmax mJ EAR 0.2 Reverse diode d v/dt IS = 3.1 A, VDS = 20 V, di/dt = 200 A/µs, Tjmax = 150 ˚C d v/dt 6 kV/µs Gate source voltage V VGS ±20 Power dissipation, one channel active TA = 25 ˚C Ptot 2 W Operating temperature ˚C Tj -55 ... +150 Storage temperature Tstg -55 ... +150 IEC climatic category; DIN IEC 68-1 55/150/56 Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Value Unit Preliminary Data BSO 615NV |
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