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STB18N60DM2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STB18N60DM2
Description  Fast-recovery body diode
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB18N60DM2 Datasheet(HTML) 5 Page - STMicroelectronics

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STB18N60DM2
Electrical characteristics
DocID027677 Rev 3
5/15
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
12
A
ISDM(1)
Source-drain current
(pulsed)
-
48
A
VSD (2)
Forward on voltage
VGS = 0 V, ISD = 12 A
-
1.6
V
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
-
125
ns
Qrr
Reverse recovery charge
-
0.675
nC
IRRM
Reverse recovery current
-
11
A
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
-
190
ns
Qrr
Reverse recovery charge
-
1225
nC
IRRM
Reverse recovery current
-
13
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.


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