STF10LN80K5

Electrical ratings

DocID027751 Rev 3

3/14

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 30

V

ID

(1)

8

A

ID

(1)

5

A

ID

(2)

Drain current pulsed

32

A

25

W

Insulation withstand voltage (RMS) from all three leads to

2500

V

dv/dt

(3)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

50

Operating junction temperature

- 55 to 150

°C

Storage temperature

Notes:

(1)

Limited by maximum junction temperature.

(2)

Pulse width limited by safe operating area

(3)

(4)

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case

5

°C/W

Thermal resistance junction-ambient

62.5

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not repetitive (pulse width

2.7

A

240

mJ