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BTS110 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BTS110 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 10 page TEMPFET® BTS 110 6 19.02.04 Drain-source on-state resistance R DS(on) = f (Tj) Parameter: I D = – 5 A, VGS = 10 V Typ. transfer characteristic I D = f (VGS) Parameter :t p = 80 µs, VDS = 25 V Gate threshold voltage V GS(th) = f (Tj) Parameter :V DS = VGS, ID = 1 mA (spread) Typ. transconductance g fs = f (ID) Parameter: t p = 80 µs, VDS = 25 V |
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