BTS 441 T

Infineon Technologies AG

1 of 11

2003-Oct-01

Smart Highside Power Switch

One Channel: 20m

Ω

Product Summary

Package

General Description

•

N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically

integrated in Smart SIPMOS® technology.

•

Providing embedded protective functions.

Application

•

µC compatible power switch for 5V, 12 V and 24 V DC applications

•

All types of resistive, inductive and capacitve loads

•

Most suitable for loads with high inrush currents, so as lamps

•

Replaces electromechanical relays, fuses and discrete circuits

Basic Funktions

•

Very low standby current

•

Optimized static electromagnetic compatibility (EMC)

•

µC and CMOS compatible

•

Fast demagnetization of inductive loads

•

Stable behaviour at undervoltage

Protection Functions

•

Short circuit protection

•

Current limitation

•

Overload protection

•

Thermal shutdown

•

Overvoltage protection (including load dump) with external

GND-resistor

•

Reverse battery protection with external GND-resistor

•

Loss of ground and loss of Vbb protection

•

Electrostatic discharge (ESD) protection

On-state Resistance

RON

20m

Ω

Operating Voltage

Vbb(on)

4.75 ... 41V

Nominal load current

IL(ISO)

21A

Current limitation

IL(lim)

65A

TO-220-5-11

TO-263-5-2

TO-220-5-12

Standard

SMD

Straight

Vbb

Logic

with

protection

functions

IN

GND

Load

PROFET

OUT