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QJD1210006 Datasheet(PDF) 1 Page - Powerex Power Semiconductors |
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QJD1210006 Datasheet(HTML) 1 Page - Powerex Power Semiconductors |
1 / 4 page Silicon Carbide MOSFET Module 100 Amperes/1200 Volts QJD1210006 Preliminary 1 04/12 Rev. 6 Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Description: Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency application. Each module consists of two MOSFET Silicon Carbide Transistors in half-bridge configuration with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Junction Temperature - 200°C £ Silicon Carbide Chips £ Industry Leading RDS(on) £ High Speed Switching £ Low Switching Losses £ Low Capacitance £ Low Drive Requirement £ Fast 50A Free Wheeling Schottky Diode £ High Power Density £ Isolated Baseplate £ Aluminum Nitride Ceramic Applications: £ High Frequency Power Supply £ High Efficiency Inverter £ High Temperature Environment Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 B 2.44 62.0 C 1.14+0.04/-0.01 29.0+1.0/-0.5 D 3.66±0.01 93.0±0.25 E 1.88±0.01 48.0±0.25 F 0.67 17.0 G 0.16 4.0 H 0.24 6.0 J 0.59 15.0 K 0.55 14.0 L 0.87 22.0 M 0.33 8.5 N 0.10 2.5 P 0.85 21.5 Dimensions Inches Millimeters Q 0.98 25.0 R 0.11 2.8 S M6 Metric M6 T 0.26 Dia. Dia. 6.5 U 0.02 0.5 V 0.71 18.0 W 0.28 7.0 X 0.16 4.0 Y 0.3 7.5 Z 0.325 8.25 AA 0.624 15.85 AB 0.709 18.0 AC 0.69 17.5 AD 1.012 25.7 G H H U U U U S1D2 S2 D1 S1 G1 S2 G2 J AC E B A D K K K Y Y N P Q Q V W V V C L Y M R X W F S - NUTS (3 TYP) T - (4 TYP) Z AB AA LABEL S1D2 D1 S2 Q AD |
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