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BTS640S2G Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BTS640S2G Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 15 page PROFET® BTS 640 S2 Semiconductor Group Page 1 of 15 2003-Oct-01 Smart Sense High-Side Power Switch Features • Short circuit protection • Current limitation • Proportional load current sense • CMOS compatible input • Open drain diagnostic output • Fast demagnetization of inductive loads • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Overload protection • Thermal shutdown • Overvoltage protection including load dump (with external GND-resistor) • Reverse battery protection (with external GND-resistor) • Loss of ground and loss of V bb protection • Electrostatic discharge (ESD) protection Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Block Diagram IN ST ESD Logic Voltage sensor Voltage source Charge pump Level shifter Temperature sensor Rectifier Limit for unclamped ind. loads Gate protection Current limit 3 1 Signal GND GND 2 V Logic Overvoltage protection + Vbb PROFET OUT 4 6, 7 Load GND Load GND RO Current Sense Output Voltage detection R IS IS 5 I IS I L Product Summary Operating voltage V bb(on) 5.0 ... 34 V On-state resistance R ON 30 m Ω Load current (ISO) I L(ISO) 12.6 A Current limitation I L(SCr) 24 A Package TO220-7-11 TO263-7-2 TO220-7-12 1 1 1 Standard (staggered) SMD Straight |
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