Q67060-S7010-A2 datasheet(8/12 Pages) INFINEON

Part #	Q67060-S7010-A2

Description	Smart Two Channel Highside Power Switch

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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8 / 12 page

BTS 707

Semiconductor Group

8

2003-Oct-01

GND disconnect

PROFET

V

IN

ST

OUT

GND

bb

V

bb

V

IN

V

ST

V

GND

Any kind of load. In case of IN = high is VOUT

≈ VIN - VIN(T+).

Due to VGND > 0, no VST = low signal available.

GND disconnect with GND pull up

PROFET

V

IN

ST

OUT

GND

bb

V

bb

V

GND

V

IN

V

ST

Any kind of load. If VGND > VIN - VIN(T+) device stays off

Due to VGND > 0, no VST = low signal available.

Vbb disconnect with energized inductive

load

PROFET

V

IN

ST

OUT

GND

bb

V

bb

high

For an inductive load current up to the limit defined by EAS

(max. ratings ) each switch is protected against loss of Vbb.

Consider at your PCB layout that in the case of Vbb dis-

connection with energized inductive load the whole load

current flows through the GND connection.

Inductive load switch-off energy

dissipation

PROFET

V

IN

ST

OUT

GND

bb

=

E

EAS

bb

L

R

ELoad

RL

L

{

L

Z

Energy stored in load inductance:

EL = 1/2·L·I

2

L

While demagnetizing load inductance, the energy

dissipated in PROFET is

EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,

with an approximate solution for RL > 0 Ω:

EAS=

IL· L

2·RL

(Vbb + |VOUT(CL)|) ln (1+

IL·RL

|VOUT(CL)|

)

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Q67060-S7010-A2 Datasheet(PDF) 8 Page - Infineon Technologies AG

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