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BTS3410G Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BTS3410G Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page 2004-03-05 Page 1 HITFETÒ BTS 3410 G Smart Dual Lowside Power Switch Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 200 m W Nominal load current ID(Nom) 1.3 A Clamping energy EAS 150 mJ Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown with auto restart · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V DC applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded protection functions. Logic Channel 1 M Vbb In1 Source1 Drain1 HITFET â Pin 2 Pin 7and 8 Logic Channel 2 In2 Source2 Pin 4 Drain2 Pin 1 Pin 5and 6 Pin 3 Complete product spectrum and additional information http://www.infineon.com/hitfet |
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