 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BUZ349 Datasheet(PDF) 7 Page - Infineon Technologies AG |
|
||||||||||||||||||||||||||||||
BUZ349 Datasheet(HTML) 7 Page - Infineon Technologies AG |
|
|
7 / 8 page  BUZ 349 Data Sheet 7 05.99 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: V GS = VDS, ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 ˚C 160 T j 2% typ 98% Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 21 A, VGS = 10 V -60 -20 20 60 100 ˚C 160 T j 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 Ω 0.19 R DS (on) typ 98% Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 0 5 10 15 20 25 30 V 40 V DS -2 10 -1 10 0 10 1 10 nF C C oss C iss C rss Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 0 10 1 10 2 10 3 10 A I F 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 V SD T j = 25 ˚C typ T j = 25 ˚C (98%) T j = 150 ˚C typ T j = 150 ˚C (98%) |
Similar Part No. - BUZ349 |
|
Similar Description - BUZ349 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
