STB45N50DM2AG

Electrical characteristics

DocID028417 Rev 1

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Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain

current

-

35

A

(1)

Source-drain

current

(pulsed)

-

140

A

VSD

(2)

Forward on

voltage

-

1.6

V

Reverse

recovery time

(see Figure 16: "Test circuit for inductive

load switching and diode recovery times")

-

105

ns

Reverse

recovery

charge

-

0.48

µC

Reverse

recovery

current

-

9.2

A

Reverse

recovery time

inductive load switching and diode

recovery times")

-

230

ns

Reverse

recovery

charge

-

2.3

µC

Reverse

recovery

current

-

20

A

Notes:

(1)

Pulse width is limited by safe operating area.

(2)

Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown voltage

±30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.